The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-C laser diodes realized by distributed polarization doping is examined theoretically and experimentally. The analysis of the capacitance-voltage measurement revealed that the average effective acceptor density of 4.2 × 1017 cm–3 is achieved even without impurity doping, and it is in good agreement with the theoretical prediction from the measured Al composition profile. This result suggests that the cladding layer is ideal for UV-C LDs because it provides sufficient hole injection while potentially avoiding internal losses due to impurity doping.

中文翻译：

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UV-C激光二极管无杂质掺杂AlGaN基p型分布极化掺杂包层的空间电荷分布研究

从理论上和实验上研究了用于通过分布式偏振掺杂实现的 UV-C 激光二极管的非掺杂 AlGaN 基 p 型包覆层的空间电荷密度分布。电容-电压测量的分析表明，即使没有杂质掺杂，平均有效受主密度也达到 4.2 × 1017 cm-3，这与测量的 Al 成分分布的理论预测非常吻合。该结果表明，包层是 UV-C LD 的理想选择，因为它提供了足够的空穴注入，同时可能避免由于杂质掺杂造成的内部损失。