In this work, doping C and codoping C and N into the Sb2Te3 traditional chalcogenide were investigated to reduce the writing current of the phase-change device using a chalcogenide as the active medium. No face-centered-cubic (FCC) structure was observed in the C-doped Sb2Te3 film, while it appeared after codoping C and N into Sb2Te3. The FCC crystallite size greatly reduced from 6.5 to 3.5–3.8 nm after codoping. In particular, the resistivity of FCC C–N codoped Sb2Te3 was about two orders of magnitude higher than that of Sb2Te3. The effect of the property of the chalcogenide on the writing current of the phase-change device was analyzed by the finite element method. The analysis showed that the writing current of the device using C–N-codoped Sb2Te3 as the active medium can significantly drop to about 1/8 of that of the Sb2Te3 based one.

中文翻译：

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C-N 共掺杂 Sb2Te3 硫族化物用于降低相变器件的写入电流

在这项工作中，将 C 掺杂并将 C 和 N 共掺杂到 Sb 中2个特3个研究了传统的硫族化物，以降低使用硫族化物作为活性介质的相变器件的写入电流。在 C 掺杂 Sb 中没有观察到面心立方 (FCC) 结构2个特3个薄膜，而它是在将 C 和 N 共掺杂到 Sb 中后出现的2个特3个. 共掺杂后，FCC 微晶尺寸从 6.5 nm 大大减小到 3.5–3.8 nm。特别是，FCC C-N 共掺杂 Sb 的电阻率2个特3个比 Sb 高约两个数量级2个特3个. 采用有限元法分析了硫族化物的性质对相变器件写入电流的影响。分析表明，使用 C-N 共掺杂 Sb 的器件的写入电流2个特3个因为活性介质可以显着下降到 Sb 的 1/8 左右2个特3个基于一个。