We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the P 2 1/2 to S 2 1/2 transition in Yb+. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with a 0.99 temporal overlap to the Yb+ emission and partially shift the emission of the defect toward the Yb+ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 2.1 × 10 4 s−1 and an entanglement fidelity of 94% can be attained using a weak excitation scheme with reasonable parameters.

中文翻译：

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ZnO 半导体缺陷和捕获的 Yb 离子之间的光子介导纠缠方案

我们提出了一种光学方案，通过擦除从两个系统发射的相同光子的路径，在捕获离子和固态供体量子位之间产生纠缠态。所提出的方案利用了 ZnO 中 In 施主束缚激子与 Yb+ 中 P 2 1/2 到 S 2 1/2 跃迁之间的相似跃迁频率。相关离子态的寿命比 ZnO 系统的寿命长 6 倍，导致发射光子的时间分布不匹配。失谐腔辅助拉曼方案用成形激光脉冲弱激发施主，以产生与 Yb+ 发射具有 0.99 时间重叠的光子，并将缺陷的发射部分移向 Yb+ 跃迁。剩余的光子位移是通过直流斯塔克效应完成的。我们证明纠缠率为 2。