We investigated high-resistivity cadmium zinc telluride (CdZnTe):In single crystals annealed in hydrogen to reveal the passivation effect of defects. An overall reduction in the concentration of defect levels induced by annealing was obviously observed by thermally stimulated current measurements. There is a large decrease by 56.51% in the concentration of secondly ionized Cd vacancies (T3) after hydrogenation. The concentration of firstly ionized Cd vacancies (T2) was a little bit lower (17.99%) in the hydrogenated CZT crystals. The formation of neutral InH complex and lower occupation of VCd by In dopant would result in a significant decrease (68.31%) in the trap density of ${\rm In}_{\rm Cd}^ +$ related shallow donor (T1) after hydrogenation. The bulk resistivity was calculated from I–V characteristic curves to be ~1.97 × 1010 Ωcm before annealing and ~1.78 × 1010 Ωcm after annealing. Hall measurements also reveal n-type conduction for the hydrogenated crystals. Electron mobility was fitted to be about 110 cm2/Vs before annealing and 488 cm2/Vs after annealing, demonstrating better carrier transport properties. Electron mobility-lifetime product could be fitted to be about 3.60 × 10−4 cm2/V before annealing and 5.45 × 10−4 cm2/V after annealing, demonstrating better detector performances.

我们研究了高电阻率碲化镉锌（CdZnTe）：在氢中退火的单晶中揭示了缺陷的钝化效果。通过热激电流测量可以明显观察到退火引起的缺陷能级浓度的总体降低。氢化后，第二离子化的Cd空位（T3）的浓度大大降低了56.51％。在氢化的CZT晶体中，首先电离的Cd空位（T2）的浓度略低（17.99％）。中性InH复合物的形成和In掺杂剂对V Cd的降低会导致$ {\ rm In} _ {\ rm Cd} ^ + $的陷阱密度显着降低（68.31％）。氢化后的相关浅供体（T1）。体电阻率，从计算出的余- V特性曲线为〜1.97×10 10 Ωcm的退火之前和〜1.78×10 10退火后Ωcm以下。霍尔测量还揭示了氢化晶体的n型传导。电子迁移率在退火之前适合为约110cm 2 / Vs，在退火之后适合为488cm 2 / Vs，表明更好的载流子传输性质。在退火之前，电子迁移率-寿命乘积可以设置为约3.60×10 -4 cm 2 / V和5.45×10 -4 cm 2/ V退火后，证明了更好的检测器性能。