Organic semiconductor devices are gaining prevalence in various technology fields due to the ease of production, tailorability, and cost. Here, we demonstrate an organic nanowire based memristor device with nonvolatile memory retention and the ability to write a variety of conductance states. Squaraine nanowires are drop-cast onto an interdigitated Au electrode array where they self-assemble into wires that span the 10 μm electrode distance. When tested with a suite of voltage pulses, the devices reveal neuromorphic memristive characteristics. We show impedance testing that reports the neuromorphic behavior independently of typical memristive I–V tests. We suggest impedance testing may be used in lieu of I–V traces at low frequencies (1–10⁴ Hz). The dominant characteristics of the device at low frequency are resistive, but the device transitions to a capacitance dominated device at ∼400 Hz. The device retains a resistive component at higher frequencies under biases of ±2, 4 V. Multilevel memory, volatility, and rewritability are also demonstrated. Organic based neuromorphic devices will be a disruptive technology due to the ease with which the core molecule can be altered in comparison to the solid-state device equivalent as well as lower production costs.

中文翻译：

---

基于Squanaine纳米线的有机忆阻器件

由于易于制造，可定制性和成本，有机半导体器件在各种技术领域中正变得越来越流行。在这里，我们演示了一种基于有机纳米线的忆阻器器件，具有非易失性存储器保留能力和写入各种电导状态的能力。鱿鱼纳米线被滴铸到一个相互交叉的金电极阵列上，在那里它们自组装成跨越10μm电极距离的导线。当用一组电压脉冲进行测试时，这些设备显示出神经形态的忆阻特性。我们展示的阻抗测试独立于典型的忆阻I – V测试报告了神经形态行为。我们建议使用阻抗测试代替I – V在低频（1–10 ⁴ Hz）时走线。低频时该器件的主要特性是电阻性的，但该器件在〜400 Hz时转变为电容主导的器件。该器件在±2、4 V的偏置下，在较高的频率下会保留一个电阻性元件。还展示了多级存储器，易失性和可重写性。基于有机物的神经形态装置将是一种破坏性技术，因为与固态装置等效物相比，可以轻松更改核心分子，并降低了生产成本。