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Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-17 , DOI: 10.1002/pssa.202000447 Axel Strömberg 1 , Prakhar Bhargava 1 , Zhehan Xu 1 , Sebastian Lourdudoss 1 , Yan-Ting Sun 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-17 , DOI: 10.1002/pssa.202000447 Axel Strömberg 1 , Prakhar Bhargava 1 , Zhehan Xu 1 , Sebastian Lourdudoss 1 , Yan-Ting Sun 1
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Direct heteroepitaxy and selective area growth (SAG) of GaP and GaAs on Si(100) and Si(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are facilitated by buffer layers grown at 410–490 °C with reactive gas mixing directly above Si substrates. High‐density islands observed on GaP buffer layers on Si result in rough morphology and defect formation in the subsequent GaP layers grown at 715 °C. The impact of growth temperature of GaAs buffer layers on the crystal quality of GaAs/Si is studied. A decreased nucleation temperature significantly improves the morphology and crystalline quality of the overall GaAs growth on Si. It is observed that Si(111) substrates are favorable for both GaP and GaAs growths in comparison with Si(100). In SAGs of GaP/Si and GaAs/Si, the high selectivity innate to HVPE is maintained in the used unconventional growth regime. The spatially resolved photoluminescence mapping reveals the material quality of GaAs/Si is enhanced by defect filtering by SAG. The outcomes of this work will pave the way of III–V/Si integration realized by cost‐effective HVPE for photonic device applications.
中文翻译：
氢化物气相外延在Si上直接异质外延和GaP和GaAs选择性区域生长
GaP和GaAs在Si（100）和Si（111）上的直接异质外延和选择性区域生长（SAG）通过低压氢化物气相外延（LP-HVPE）实现，在410-490处生长的缓冲层促进了这种生长°C，反应气体直接在Si衬底上方混合。在Si上的GaP缓冲层上观察到的高密度岛会导致随后在715°C下生长的GaP层出现粗糙的形貌并形成缺陷。研究了GaAs缓冲层的生长温度对GaAs / Si晶体质量的影响。降低的成核温度显着改善了Si上整体GaAs生长的形貌和晶体质量。可以看出，与Si（100）相比，Si（111）衬底对GaP和GaAs的生长均有利。在GaP / Si和GaAs / Si的SAG中，HVPE固有的高选择性在使用的非常规生长方案中得以保持。空间分辨的光致发光图谱表明，通过SAG进行缺陷过滤可以提高GaAs / Si的材料质量。这项工作的成果将为光子器件应用中具有成本效益的HVPE实现III–V / Si集成铺平道路。
更新日期：2020-10-17
中文翻译：
氢化物气相外延在Si上直接异质外延和GaP和GaAs选择性区域生长
GaP和GaAs在Si（100）和Si（111）上的直接异质外延和选择性区域生长（SAG）通过低压氢化物气相外延（LP-HVPE）实现，在410-490处生长的缓冲层促进了这种生长°C，反应气体直接在Si衬底上方混合。在Si上的GaP缓冲层上观察到的高密度岛会导致随后在715°C下生长的GaP层出现粗糙的形貌并形成缺陷。研究了GaAs缓冲层的生长温度对GaAs / Si晶体质量的影响。降低的成核温度显着改善了Si上整体GaAs生长的形貌和晶体质量。可以看出，与Si（100）相比，Si（111）衬底对GaP和GaAs的生长均有利。在GaP / Si和GaAs / Si的SAG中，HVPE固有的高选择性在使用的非常规生长方案中得以保持。空间分辨的光致发光图谱表明，通过SAG进行缺陷过滤可以提高GaAs / Si的材料质量。这项工作的成果将为光子器件应用中具有成本效益的HVPE实现III–V / Si集成铺平道路。
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