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Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-16 , DOI: 10.1002/pssr.202000457 Valentin Evang 1 , Riccardo Mazzarello 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-16 , DOI: 10.1002/pssr.202000457 Valentin Evang 1 , Riccardo Mazzarello 1
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Phase‐change materials (PCMs) are widely used for optical data storage due to their fast and reversible transitions between a crystalline and an amorphous phase that exhibit reflectivity contrast. In the last decade, PCMs have been found to be promising candidates for the development of nonvolatile electronic memories, as well. In this context, superlattices of thin layers of GeTe and Sb2Te3 show an unprecedented performance gain in terms of switching speed and power consumption with respect to bulk GeSbTe compounds. Models of crystalline–crystalline transitions, proposed to explain the improved properties, however, are challenged by recent experiments in which GeTe–Sb2Te3 superlattices are observed to reconfigure toward a van der Waals heterostructure of rhombohedral GeSbTe and Sb2Te3. Herein, ab initio molecular dynamics simulations are used to explore an alternative switching mechanism that comprises amorphous–crystalline transitions of ultrathin GeSbTe layers between crystalline Sb2Te3. Despite some positive results obtained by tailoring the quenching protocol, overall the extensive simulations do not yield clear evidence for this mechanism. Therefore, they suggest that the switching process probably involves a transition between two crystalline states.
中文翻译：
GeSbTe硫族化物超晶格中没有部分非晶化
相变材料（PCM）由于其在结晶相和非晶相之间表现出反射率对比的快速且可逆的转变而被广泛用于光学数据存储。在过去的十年中，人们也发现PCM是发展非易失性电子存储器的有希望的候选者。在这种情况下，相对于块状GeSbTe化合物，GeTe和Sb 2 Te 3薄层的超晶格在开关速度和功耗方面表现出空前的性能提升。提议用来解释改善的性质的结晶-结晶转变模型受到了最近的GeTe–Sb 2 Te 3实验的挑战。观察到超晶格向菱形GeSbTe和Sb 2 Te 3的范德华异质结构重构。在这里，从头算分子动力学模拟被用来探索一种替代的转换机制，该机制包括在晶体Sb 2 Te 3之间的超薄GeSbTe层的非晶-晶体转变。尽管通过定制淬火方案获得了一些积极的结果，但总体而言，广泛的模拟并未为该机理提供清晰的证据。因此，他们认为转换过程可能涉及两个晶态之间的过渡。
更新日期：2020-10-16
中文翻译：
GeSbTe硫族化物超晶格中没有部分非晶化
相变材料（PCM）由于其在结晶相和非晶相之间表现出反射率对比的快速且可逆的转变而被广泛用于光学数据存储。在过去的十年中，人们也发现PCM是发展非易失性电子存储器的有希望的候选者。在这种情况下，相对于块状GeSbTe化合物，GeTe和Sb 2 Te 3薄层的超晶格在开关速度和功耗方面表现出空前的性能提升。提议用来解释改善的性质的结晶-结晶转变模型受到了最近的GeTe–Sb 2 Te 3实验的挑战。观察到超晶格向菱形GeSbTe和Sb 2 Te 3的范德华异质结构重构。在这里，从头算分子动力学模拟被用来探索一种替代的转换机制，该机制包括在晶体Sb 2 Te 3之间的超薄GeSbTe层的非晶-晶体转变。尽管通过定制淬火方案获得了一些积极的结果，但总体而言，广泛的模拟并未为该机理提供清晰的证据。因此，他们认为转换过程可能涉及两个晶态之间的过渡。
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