An alkaline-developable and negative-type photosensitive polyimide (PSPI) based on poly(amic acid) (PAA) and a photo-base generator (PBG) has been developed by using chemical amplification method. The PAA(PDA-BPDA) is composed of p-phenylenediamine (PDA) and 4,4′-biphtalic dianhydride (BPDA), and the derived PI possesses excellent thermal and thermo mechanical stability due to the highly rigid and linear backbone. The photolithographic parameters for the PSPI including the PBG content, post-exposure baking (PEB) temperature, PEB time and the molecular weight of the PAA was investigated with the adoption of (E)-3-(2-hydroxy-4-methoxyphenyl)-1-(piperidin-1-yl)prop-2-en-1-one (HMPP) as the PBG. The PSPI based on PAA(PDA-BPDA) with a molar ratio of 0.9/1.0 between PDA and BPDA, and HMPP (15 wt% to PAA) showed a sensitivity of 142 mJ/cm² and contrast of 0.58 when exposed to 365-nm light (i-line), PEB at 170 °C for 5 min, and developed with an aqueous solution of 2.38 wt% tetramethylammonium hydroxide and isopropanol. A clear negative 4-μm feature pattern was obtained and imidized into the PI pattern upon heating at 250 °C, confirming by scanning electron microscopy. This is the first work to utilize a highly rigid backbone with high thermal stability for PSPIs. The outstanding thermal and thermo mechanical stability manifests that developed PSPIs is highly potential in the microelectronics.

通过使用化学放大方法，开发了一种基于聚（酰胺酸）（PAA）和光碱产生剂（PBG）的碱可显影负型感光性聚酰亚胺（PSPI）。PAA（PDA-BPDA）由对苯二胺（PDA）和4,4'-双邻苯二甲酸二酐（BPDA）组成，并且由于具有高刚性和线性骨架，因此派生的PI具有出色的热和热机械稳定性。采用（E）研究了PSPI的光刻参数，包括PBG含量，曝光后烘烤（PEB）温度，PEB时间和PAA分子量。）-3-（2-羟基-4-甲氧基苯基）-1-（哌啶-1-基）丙-2-烯-1-酮（HMPP）作为PBG。根据PAA（PDA-BPDA），用0.9 PDA和BPDA，和HMPP（15重量％至PAA）之间/ 1.0的摩尔比PSPI显示的142毫焦/厘米的灵敏度²和0.58对比当暴露于365-纳米的光（我-line），在170℃进行5分钟的PEB，并与2.38重量％的氢氧化四甲铵和异丙醇的水溶液显影。明显的负4μ获得m个特征图案，并在250℃下加热后酰亚胺化为PI图案，通过扫描电子显微镜确认。这是为PSPI使用具有高热稳定性的高刚性主干的第一项工作。出色的热和热机械稳定性表明，开发的PSPI在微电子领域具有巨大潜力。