In this paper we present a study on electron states in a double quantum well wire with asymmetrical barriers, also emission spectra are analyzed for a process of electron Raman scattering in this system, for which we calculate the differential cross section. The model we use considers the system to be at a temperature of $T=0K$ and the presence of a single electron in the conduction band. In addition, the conduction band is assumed to be parabolic, which splits into a system of sub-bands due to confinement. On the other hand, in this work we study the net Raman gain of the system, illustrating the results through the transition rate since they are directly proportional. The results obtained in this work are compared to those of previous works and we show that the net Raman gain of the double quantum well wire with asymmetrical barriers is greater than that of the step-quantum well wire, and than that of the core/shell quantum well wire, obtaining the results of these systems as limit cases. We also showed that the system studied here is slightly more efficient than the double quantum well with asymmetrical barriers. These results can be applied in the manufacture of electronic and optoelectronic devices as quantum cascade lasers.

在本文中，我们对具有不对称势垒的双量子阱线中的电子态进行了研究，还分析了该系统中电子拉曼散射过程的发射光谱，并据此计算了微分截面。我们使用的模型认为系统温度为$Ť=0ķ$并且在导带中存在单个电子。另外，假定导带是抛物线的，由于限制，导带分裂成子带系统。另一方面，在这项工作中，我们研究了系统的净拉曼增益，并通过过渡速率说明了结果，因为它们是成正比的。这项工作中获得的结果与以前的工作进行了比较，我们表明具有不对称势垒的双量子阱线的净拉曼增益大于阶跃量子阱线的净拉曼增益，并且大于核/壳的拉曼增益。量子阱线，获得这些系统的结果作为极限情况。我们还表明，此处研究的系统比具有不对称势垒的双量子阱效率更高。