Abstract Thin films Zn1-xCaxO (0 ≤ x ≤ 6%) on a p-Si substrate are elaborated by sol-gel process and spin coating. X-ray diffraction displays a hexagonal wurtzite structure with an increase of lattice parameters confirming the substitution of Zn2+ by Ca2+. The estimation of crystallite sizes along the three main crystallographic planes is practically constant (22 nm) suggesting a spherical symmetry shape of the crystallites which is confirmed by SEM. UV–visible reflectance spectra attest a band gap tuning from 3.144 to 3.262 eV which is confirmed by the PL measurement at 2 K for Zn0.94Ca0.06O sample by the appearance of a broad band around 3.508 eV. Although the luminescence of the samples is weak, we well distinguish the free exciton emission (FXA) positioned at 3.376 eV and the bound exciton recombination (D0X) around 3.362 eV.

中文翻译：

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通过旋涂法沉积在 p-Si 衬底上的溶胶凝胶 Zn1-xCaxO 薄层的表征

摘要 通过溶胶-凝胶工艺和旋涂工艺在 p-Si 衬底上制备了薄膜 Zn1-xCaxO (0 ≤ x ≤ 6%)。X 射线衍射显示六方纤锌矿结构，晶格参数增加，证实了 Zn2+ 被 Ca2+ 取代。沿三个主要晶面的微晶尺寸的估计实际上是恒定的 (22 nm)，这表明微晶具有球对称形状，这通过 SEM 得到证实。紫外-可见反射光谱证明带隙调谐范围从 3.144 到 3.262 eV，这通过 Zn0.94Ca0.06O 样品在 2 K 时的 PL 测量通过出现在 3.508 eV 附近的宽带而得到证实。虽然样品的发光很弱，但我们很好地区分了位于 3.376 eV 的自由激子发射 (FXA) 和大约 3.362 eV 的束缚激子复合 (D0X)。