Abstract Cd-doped In2O3 was synthesized by a facile solvothermal, template-free preparation method. The phase structure and properties were characterized by various methods. The surface of Cd-doped In2O3 became coarse compared with that of pure In2O3, according to the scanning electron microscopeimages, which enhanced the ability to absorb the gas. The electron paramagnetic resonance showed that the Cd-doped In2O3 can generate more defects and oxygen vacancies. By measuring the gas sensitivity, the response of Cd-doped In2O3 was 1.6 times than that of pure In2O3. Thus, Cd-doped In2O3 can promote gas-sensing performance compared with pure In2O3.

中文翻译：

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氧空位增强丙酮传感性能

摘要 通过一种简便的溶剂热、无模板制备方法合成了 Cd 掺杂的 In2O3。通过各种方法表征相结构和性质。根据扫描电子显微镜图像，Cd 掺杂的 In2O3 的表面比纯 In2O3 的表面变得粗糙，这增强了吸收气体的能力。电子顺磁共振表明，Cd 掺杂的 In2O3 可以产生更多的缺陷和氧空位。通过测量气体灵敏度，Cd 掺杂 In2O3 的响应是纯 In2O3 响应的 1.6 倍。因此，与纯 In2O3 相比，Cd 掺杂的 In2O3 可以提高气敏性能。