Electrical properties of vertical Schottky diodes fabricated on GaN regrown on hydride vapor phase epitaxy GaN substrates are investigated. The deposition of Ni frames makes it possible to designate the dislocation locations by cathodoluminescence before the fabrication of diodes. Since the distribution of dislocations is inhomogeneous and arranged into clusters over the GaN substrates, diodes made on either areas free of dislocation-clusters or areas with dislocation-clusters have been studied. Both forward and reverse characteristics of diodes fabricated on GaN with different doping levels and dislocation densities have been investigated. It is shown that the reverse leakage is not sensitive to the presence of dislocation clusters. On the other hand, there is a dispersion of reverse leakage which increases in diodes grown on substrates having larger mean dislocation density. The results also demonstrate that a critical maximum distance of around 100 µm between active defects triggers larger reverse leakage currents.

研究了在氢化物气相外延GaN衬底上再生长的GaN上制造的垂直肖特基二极管的电性能。Ni框架的沉积使得可以在制造二极管之前通过阴极发光来指定位错位置。由于位错的分布是不均匀的，并且在GaN衬底上排列成簇，因此已经研究了在无位错簇的区域或有位错簇的区域上制作的二极管。已经研究了在GaN上制造的具有不同掺杂水平和位错密度的二极管的正向和反向特性。结果表明，反向泄漏对位错簇的存在不敏感。另一方面，反向泄漏的扩散会增加在平均位错密度较大的基板上生长的二极管中的扩散。结果还表明，有源缺陷之间的最大最大距离约为100 µm会触发较大的反向漏电流。