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Intrinsic planar defects in diamond and the upper limit on its melting temperature
Diamond and Related Materials ( IF 4.1 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.diamond.2020.108114
M.V. Kondrin , Y.B. Lebed , V.V. Brazhkin

Abstract Investigating melting curve of diamond is a a challenging task both from experimental and theoretical points of view. Here we propose a simple method of calculation of the upper limit of diamond melting temperature, based on the study of planar defects in it. Accumulation of certain type of planar defects leads to softening of interatomic bonds and eventually to loss of shear rigidity of diamond and crystal disordering. The upper limit on melting temperature, defined in this work, is about 4750 K at ambient pressure and increases with pressure at the rate of 35 K/GPa. It appears, that experimentally established melting temperatures of diamond at the low pressure part of the phase diagram (at about 15 GPa) are close to the proposed upper limit on the melting temperature.

中文翻译:

金刚石的固有平面缺陷及其熔化温度上限

摘要 从实验和理论的角度研究金刚石的熔化曲线是一项具有挑战性的任务。在这里,我们提出了一种简单的计算金刚石熔化温度上限的方法,基于对金刚石平面缺陷的研究。某些类型的平面缺陷的积累导致原子间键的软化并最终导致金刚石的剪切刚度和晶体无序化的损失。在这项工作中定义的熔化温度上限在环境压力下约为 4750 K,并以 35 K/GPa 的速率随压力增加。看来,在相图的低压部分(约 15 GPa)实验确定的金刚石熔化温度接近建议的熔化温度上限。
更新日期:2020-12-01
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