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Effect of Implanting Ar + Ions on the Nature of the Mechanical Damage to Amorphous SiO 2
Glass Physics and Chemistry ( IF 0.8 ) Pub Date : 2020-10-17 , DOI: 10.1134/s1087659620050089
I. P. Shcherbakov , A. E. Chmel’

Abstract

The surface of amorphous SiO2 samples, which receives various doses of implantation by Ar+ ions with an energy of 40 keV, undergo a point shock impact. The kinetics of the accumulation of microcracks are investigated using the acoustic emission method. The square of the amplitude of the acoustic emission pulse appears to be proportional to the energy released during the formation of a microcrack. It is demonstrated that the energy distribution in the damaged samples that receive a dose of up to 1 × 1015 Ar+/cm2 (inclusive) is random and identical to the distribution over the surface not subjected to implantation. With the dose of 5 × 1015 and 1 × 1016 Ar+/cm2, the energy distribution follows the typical power law for correlated events. In the implanted material, the local destruction of the surface shows signs of a plastic flow.



中文翻译:

注入Ar +离子对非晶态SiO 2机械损伤性质的影响

摘要

非晶态SiO 2样品的表面受到点冲击冲击,该表面通过Ar +离子以40 keV的能量接受各种剂量的注入。使用声发射方法研究了微裂纹累积的动力学。声发射脉冲的振幅的平方似乎与微裂纹形成期间释放的能量成比例。结果表明,在受损样品中接受最高1×10 15 Ar + / cm 2(含)剂量的能量分布是随机的,并且与未经植入的表面上的分布相同。剂量为5×10 15和1×10 16 Ar+ / cm 2,能量分布遵循相关事件的典型幂定律。在植入的材料中,表面的局部破坏显示出塑性流动的迹象。

更新日期:2020-10-17
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