This study investigates the electrical and photoresponse properties of Nd-YAG annealed Pt/n-PSi/Pt photodetectors. A porous silicon (PSi) layer was deposited on a single crystalline n-type Si via photoelectrochemical etching in aqueous hydrofluoric acid at 45 mA cm−2 for 30 min. Annealing of the n-PSi layer was conducted using a Q-switching Nd:YAG laser at different fluence laser energies (20, 30, 40, 60 mJ cm−2) with a pulse duration of 10 ns. The effect of Nd:YAG laser irradiation on the morphological and structural properties of the deposited n-PSi layer was determined. The n-PSi sample synthesized at 40 mJ cm−2 showed the maximum average discrepancy. The photodetectors fabricated using such materials showed very high sensitivity (1527.9) and low dark current (2.58 × 10−4 A) with an internal photoconductive gain of 16.27, photoresponse of 3.1 A W−1, response time of 0.29 s, and recovery time of 0.45 s. These exceptional properties of the fabricated photodetectors indicate that the laser annealing approach is a viable tool for the synthesis of n-PSi that is suitable for various applications.

中文翻译：

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Nd-YAG退火Pt/n-PSi/Pt光伏光电探测器在不同激光能量下的光物理性能

本研究调查了 Nd-YAG 退火 Pt/n-PSi/Pt 光电探测器的电学和光响应特性。通过在氢氟酸水溶液中以 45 mA cm-2 光电化学蚀刻 30 分钟，在单晶 n 型 Si 上沉积多孔硅 (PSi) 层。n-PSi 层的退火使用 Q 开关 Nd:YAG 激光器在不同能量密度激光能量 (20, 30, 40, 60 mJ cm-2) 下进行，脉冲持续时间为 10 ns。确定了 Nd:YAG 激光照射对沉积的 n-PSi 层的形态和结构特性的影响。在 40 mJ cm-2 合成的 n-PSi 样品显示出最大的平均差异。使用这种材料制造的光电探测器显示出非常高的灵敏度 (1527.9) 和低暗电流 (2.58 × 10−4 A)，内部光电导增益为 16.27，光响应为 3。1 AW-1，响应时间为 0.29 秒，恢复时间为 0.45 秒。所制造的光电探测器的这些特殊特性表明，激光退火方法是合成适用于各种应用的 n-PSi 的可行工具。