Device performance of two dimensional (2D) material based field effect transistors is severely limited by the relatively high contact resistance encountered at the contact-channel interface. Metal-graphene hybrid contacts have been previously used to improve the contact resistance of devices based on thick exfoliated materials. Here we report a novel 2D FET fabrication process entailing the transfer of metal-graphene hybrid contacts on top of 3 monolayer-thick chemical vapor deposition (CVD) MoS 2 , enabling a lithography free contacting strategy, with respect to MoS 2 . Three different metal-graphene stacks consisting of Ni, Pd and Ru, have been fabricated, transferred onto MoS 2 and characterized extensively using electrical and physical characterization techniques. We find strong correlation between the measured electrical characteristics and physical characterization of the contact interface. From Raman spectra measurement, maximum charge transfer ...

中文翻译：

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MoS 2场效应晶体管上的基于石墨烯的Van der Waals触点

基于二维（2D）材料的场效应晶体管的器件性能受到接触通道界面处相对较高的接触电阻的严重限制。先前已经使用金属-石墨烯混合触点来改善基于厚剥离材料的器件的接触电阻。在这里，我们报告了一种新颖的2D FET制造工艺，该工艺需要在3个单层化学气相沉积（CVD）MoS 2的顶部转移金属-石墨烯混合触点，从而实现相对于MoS 2的无光刻接触策略。已经制造了由Ni，Pd和Ru组成的三种不同的金属-石墨烯叠层，转移到MoS 2上，并使用电和物理表征技术对其进行了广泛的表征。我们发现，测得的电气特性与接触界面的物理特性之间具有很强的相关性。通过拉曼光谱测量，最大的电荷转移...