The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be boosted by addition of chlorine. This has been explored and applied for hard coatings and electronic grade SiC. We briefly summarize the recent research done in the field of SiC CVD and discuss the understanding of the CVD chemistry with addition of halides. We seek to improve a previous statement that SiCl 2 is the main silicon species for growth of SiC. Recent experiments and modeling suggest that SiCl 2 , and its fluorinated and brominated analogues, are inactive and that SiF/SiCl/SiBr are the main halogenated species for growth.

中文翻译：

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透视图—对SiC化学气相沉积的卤化沉积化学的最新认识

通过添加氯可以提高化学气相沉积（CVD）中碳化硅（SiC）的沉积速率。已经探索并将其应用于硬质涂层和电子级SiC。我们简要总结了最近在SiC CVD领域进行的研究，并讨论了对添加卤化物对CVD化学的理解。我们力求改善先前的说法，即SiCl 2是SiC生长的主要硅物质。最近的实验和建模表明，SiCl 2及其氟化和溴化类似物是无活性的，并且SiF / SiCl / SiBr是主要的卤代物质。