We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato) aluminum (Alq 3 ) as an electron transport layer by vacuum thermal evaporation. Another small organic molecule of N,N’-bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine (NPB) was used as a hole transport layer. We took ITO/NPB/Sb 2 Se 3 /Alq 3 /Al as the device architecture. An open circuit voltage ( V oc ) of 0.37 V, a short circuit current density ( J sc ) of 21.2 mA/cm 2 , and a power conversion efficiency (PCE) of 3.79% were obtained on an optimized device. A maximum external quantum efficiency of 73% was achieved at 600 nm. The J sc , V oc , and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3 . The results suggest that the interface state density at Sb 2 Se 3 /Al interface is decreased by inserting an Alq

中文翻译：

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电子传输层为Alq 3的硒化硒薄膜太阳能电池

我们使用三（8-羟基-喹啉基）铝（Alq 3）作为电子传输层，通过真空热蒸发法制备了Sb 2 Se 3薄膜太阳能电池。N，N′-双（萘-1-基）-N，N′-双（苯基）联苯胺（NPB）的另一个小有机分子用作空穴传输层。我们将ITO / NPB / Sb 2 Se 3 / Alq 3 / Al作为设备架构。在优化的器件上获得了0.37 V的开路电压（V oc），21.2 mA / cm 2的短路电流密度（J sc）和3.79％的功率转换效率（PCE）。在600 nm处达到73％的最大外部量子效率。引入Alq 3电子传输层后，J sc，V oc和PCE显着增强。结果表明，通过插入Alq可以降低Sb 2 Se 3 / Al界面的界面态密度。