Abstract Carrier doping to 3d transition metal oxides was proposed as an effective 3d band-filling control method. The mechanism differs from that previously reported to involve “charge discontinuity at the heterointerface”. The mechanism uses the energy difference between 3d bands beyond the heterointerface, with the relative energy of the O2p band being shared at the heterointerface. To test the proposal, electrical conductivity was investigated at the heterointerface between LaFeO3 and SrTiO3. The LaFeO3/SrTiO3 heterointerface showed a metallic conductivity similar to that observed for a LaAlO3/SrTiO3 heterointerface. However, the sheet resistance of the LaFeO3/SrTiO3 system was larger than that of the previously reported LaAlO3/SrTiO3 system. The dependence of the sheet conductance on the thickness of the LaFeO3 layer also differed from the corresponding dependence of the LaAlO3/SrTiO3 system. These findings suggest it is possible to control the Fe3d6 band-filling of LaFeO3 by retransfer of electrons from the TiO2 layer to the FeO2 layer.

中文翻译：

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LaFeO3 和 SrTiO3 异质界面的金属电导率

摘要 载流子掺杂到 3d 过渡金属氧化物被提出作为一种有效的 3d 带填充控制方法。该机制与先前报道的涉及“异质界面处的电荷不连续性”的机制不同。该机制利用异质界面之外的 3d 波段之间的能量差异，O2p 波段的相对能量在异质界面处共享。为了测试该提议，在 LaFeO3 和 SrTiO3 之间的异质界面处研究了电导率。LaFeO3/SrTiO3 异质界面显示出与观察到的 LaAlO3/SrTiO3 异质界面相似的金属导电性。然而，LaFeO3/SrTiO3 系统的薄层电阻大于先前报道的 LaAlO3/SrTiO3 系统。薄层电导对 LaFeO3 层厚度的依赖性也不同于 LaAlO3/SrTiO3 系统的相应依赖性。这些发现表明，可以通过电子从 TiO2 层到 FeO2 层的再转移来控制 LaFeO3 的 Fe3d6 带填充。