Numerical approaches play an outstanding role in solution of quantum mechanical problems with due attention to the complexity of analytic solutions for open systems. This paper studies quantum characteristics of the previously proposed side-contacted field-effect diode (S-FED) as an emerging device in the modern system-on-chips (SoCs) using the finite-difference method (FDM). The characteristics obtained by solving the Schrödinger equation and regarding the distinguished potentials in ON and OFF states include energy levels and time-independent/dependent wave functions. The cosine dependency of eigenvalues on longitudinal position conveys level broadening in high states stringing a sequence of probability oscillations in the ON state. Remarkable potential barriers in the OFF state result in an inability of electron movement from source to drain in low energies; nevertheless, by overcoming the total energy to potential barrier, the transport is feasible in higher states, so that minority carriers contribute to transport mechanism in the highest energies.

数值方法在解决量子力学问题中发挥了杰出的作用，并充分注意了开放系统的解析方法的复杂性。本文使用有限差分法（FDM）研究了先前提出的侧接触场效应二极管（S-FED）的量子特性，该二极管是现代片上系统（SoC）中的新兴设备。通过求解Schrödinger方程并考虑到ON和OFF状态下的显着电势获得的特性包括能级和与时间无关/与时间相关的波动函数。特征值对纵向位置的余弦依赖性在高状态下传达了水平加宽，从而在ON状态下串接了一系列概率振荡。在关闭状态下，明显的势垒导致低能状态下电子无法从源极移动到漏极。但是，通过克服总能量达到潜在的势垒，在较高的状态下进行传输是可行的，因此少数载流子有助于以最高能量进行传输。