Ge nanocrystals (GeNCs) embedded in SiO₂ matrix were prepared by co-sputtering method and heat treatment. The formation of the GeNCs were confirmed by X-ray diffraction and Raman spectroscopy. Photon absorbance recordedly increased with the increased Ge content, being in consistent with the results shown in the transient induced absorption measurements. The direct transitions between Γ and L points in the Brillouin zone, assigned as E₁, were established at approximately 2 eV and relatively independent from the GeNC sizes. Raman scattering peaks characterised for crystalline Ge at approximately 300 cm⁻¹ were observed to shift with the increasing laser excitation flux. While the displacement of the Raman peak (ΔR_s) increased with the Ge content, the ratios of the displacement rates and optical coefficients (a), ΔR_s/a, were found to be the same for all the samples, suggesting an intrinsic thermal characteristic of the GeNCs.

采用共溅射和热处理的方法制备了嵌入SiO ₂基体中的Ge纳米晶（GeNCs）。通过X射线衍射和拉曼光谱证实了GeNC的形成。记录的光子吸收率随Ge含量的增加而增加，这与瞬态诱导吸收测量中显示的结果一致。布里渊区的Γ点和L点之间的直接跃迁（指定为E ₁）建立在大约2 eV且相对独立于GeNC的大小。观察到在大约300 cm ^-1处具有特征的Ge晶体的拉曼散射峰随激光激发通量的增加而移动。而拉曼峰的位移（ΔR _s）与Ge的含量的增加，位移率和光学系数的比（A），Δ - [R_小号/ A，被认为是对所有样品是相同的，这表明GeNCs的固有热特性。