The optoelectronics and spectroscopic properties of N, N-diphenyl-N, N-bis(3-methylphenyl)-1, 1-biphenyl-4.4 diamine: tris (8-hydroxyquinolinate) aluminum (TPD:Alq3) systems were investigated for the application of ultraviolet (UV) sensors. Solution processed spin coating technique was used to deposit the films on quartz and to fabricate the devices on ITO-integrated substrates. Results showed that UV absorption of TPD was improved by its doping with Alq3 acceptor in a 1:2 volumetric ratio, thereby reducing its energy gap from 3.08 eV to 2.95 eV. The electronic transition in TDP was found to be direct forbidden, but changed to direct allowed transition by Alq3 dopant. Larger photocurrent, increased exciton generation and improved UV sensing was achieved for TPD:Alq3 (1:2) based UV detectors compared to that of the TPD-based devices. The signal to noise ratio was increased when Alq3 content was added up to 1:2 volumetric ratio, while it was decreased when higher amount of Alq3 was added.

研究了N，N-二苯基-N，N-双（3-甲基苯基）-1，1-联苯基-4.4二胺：三（8-羟基喹啉）铝（TPD：Alq3）体系的光电学和光谱性质紫外线（UV）传感器。使用溶液处理的旋涂技术将膜沉积在石英上，并在ITO集成基板上制造器件。结果表明，通过以1：2的体积比掺杂Alq3受体可以改善TPD的紫外线吸收，从而将其能隙从3.08 eV降低到2.95 eV。发现TDP中的电子跃迁是直接禁止的，但被Alq3掺杂剂更改为直接允许跃迁。与基于TPD的设备相比，基于TPD：Alq3（1：2）的UV检测器可实现更大的光电流，更多的激子产生和更好的UV感测。