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Development of cryogenic cooler based on n-type Bi-Sb thermoelectric and HTSC
Cryogenics ( IF 1.8 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.cryogenics.2020.103197
N. Sidorenko , T. Parashchuk , M. Maksymuk , Z. Dashevsky

Abstract Single crystals of n-Bi-Sb solid solutions with Sb content of 7-15 at.% are the most efficient thermoelectric (TE) materials over the temperature range of T ≤ 200 K. However, the use of these materials for construction of real thermoelectric devices are limited due to low mechanical strength. In this paper, for strengthening Bi-Sb single crystals, the method of the extrusion in a liquid medium under high hydrostatic pressure has been developed. The thermoelectric properties of Bi0.91Sb0.09 extruded crystals and single crystals were studied over the entire temperature range of 77 - 200 K. The high dimensionless thermoelectric figure of merit ∼0.95 was obtained for the Bi0.91Sb0.09 single crystal measured in the transverse magnetic field. Unique thermoelectric coolers for operating temperatures below 100 K based on the n-type Bi0.91Sb0.09 leg and a passive leg based on a high-temperature YBa2Cu3O7-x superconductor (HTSC) films have been constructed. The achieved maximum value of temperature difference ΔT = 14 K and the maximum cooling capacity Qc = 0.4 W (the temperature of the hot side of cryogenic module Th = 80 K, an electric current I = 6.4 A and a voltage V = 0.10 V) makes evident that using of the Bi-Sb extruded crystals in place of single crystals for the cryogenic coolers is more reasonable due to much better mechanical properties and similar values of cooling capacity.

中文翻译:

基于n型Bi-Sb热电和HTSC的低温冷却器的研制

摘要 在 T ≤ 200 K 的温度范围内,Sb 含量为 7-15 at.% 的 n-Bi-Sb 固溶体单晶是最有效的热电 (TE) 材料。由于机械强度低,真正的热电设备受到限制。在本文中,为了强化 Bi-Sb 单晶,开发了在高静水压力下在液体介质中挤压的方法。在 77 - 200 K 的整个温度范围内研究了 Bi0.91Sb0.09 挤出晶体和单晶的热电性能。 Bi0.91Sb0.09 单晶的高无量纲热电品质因数约为 0.95。横向磁场。基于 n 型 Bi0.91Sb0 的独特热电冷却器,适用于低于 100 K 的工作温度。已经构建了基于高温 YBa2Cu3O7-x 超导体 (HTSC) 薄膜的 09 腿和无源腿。达到的温差最大值 ΔT = 14 K 和最大冷却能力 Qc = 0.4 W(低温模块热侧的温度 Th = 80 K,电流 I = 6.4 A 和电压 V = 0.10 V)很明显,由于更好的机械性能和相似的冷却能力值,使用 Bi-Sb 挤压晶体代替单晶用于低温冷却器更合理。
更新日期:2020-12-01
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