We will study the spin-polarized transport through devices of single-ion magnets. A device consisted of the scanning tunneling microscopy (STM) Co tip, the single-ion magnet (Cp*) Ln (COT) (Cp* represents pentamethyl pentacadiene; Ln represents Er^III, Dy^III, Ho^III; COT stands for cyclooctatetraene), and the Au(111) substrate is proposed. We calculate the current curve for the parallel and anti-parallel configurations for the device of Er single-ion magnet, and find that the tunnel magnetoresistance (TMR) changes with bias − 34~24%, which indicates it is promising for the application in magnetic storage. After comparing the currents through devices of (Cp*) Ln (COT) single-ion magnets, we find that Er single-ion magnet has a better rectifying character than Dy and Ho single-ion magnet, but Ho single-ion magnet has an obvious negative differential conductance. By analysis of their transmission spectrums, these properties are well explained. The spin-polarized transport for the derivatives of Er single-ion magnets is also investigated; we find that they have better rectification and negative differential conductance features, and have potential application on multifunctional molecular devices.

我们将研究通过单离子磁体的器件的自旋极化传输。一种由扫描隧道显微镜（STM）Co尖端，单离子磁体（Cp *）Ln（COT）组成的设备（Cp *代表五甲基戊二烯； Ln代表Er ^III，Dy ^III，Ho ^III; COT代表环辛酸酯），并提出了Au（111）衬底。我们计算了Er单离子磁体器件的并联和反并联配置的电流曲线，发现隧道磁阻（TMR）随偏置-34〜24％的变化，这表明它在半导体中的应用前景广阔。磁存储。在比较通过（Cp *）Ln（COT）单离子磁体的器件的电流后，我们发现Er单离子磁体的整流特性要比Dy和Ho单离子磁体的整流特性好，但是Ho单离子磁体的整流特性却好于Dy和Ho单离子磁体。明显的负差分电导。通过分析它们的透射光谱，可以很好地解释这些特性。还研究了Er单离子磁体衍生物的自旋极化输运；