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Spin-Polarized Transport Through Devices of Er Single-Ion Magnets and Its Derivatives
Journal of Superconductivity and Novel Magnetism ( IF 1.6 ) Pub Date : 2020-07-28 , DOI: 10.1007/s10948-020-05619-7
Jie Zhou , Xue-Ming Sun , Zheng-Chuan Wang

We will study the spin-polarized transport through devices of single-ion magnets. A device consisted of the scanning tunneling microscopy (STM) Co tip, the single-ion magnet (Cp*) Ln (COT) (Cp* represents pentamethyl pentacadiene; Ln represents ErIII, DyIII, HoIII; COT stands for cyclooctatetraene), and the Au(111) substrate is proposed. We calculate the current curve for the parallel and anti-parallel configurations for the device of Er single-ion magnet, and find that the tunnel magnetoresistance (TMR) changes with bias − 34~24%, which indicates it is promising for the application in magnetic storage. After comparing the currents through devices of (Cp*) Ln (COT) single-ion magnets, we find that Er single-ion magnet has a better rectifying character than Dy and Ho single-ion magnet, but Ho single-ion magnet has an obvious negative differential conductance. By analysis of their transmission spectrums, these properties are well explained. The spin-polarized transport for the derivatives of Er single-ion magnets is also investigated; we find that they have better rectification and negative differential conductance features, and have potential application on multifunctional molecular devices.



中文翻译:

通过Er单离子磁体及其衍生物的自旋极化输运

我们将研究通过单离子磁体的器件的自旋极化传输。一种由扫描隧道显微镜(STM)Co尖端,单离子磁体(Cp *)Ln(COT)组成的设备(Cp *代表五甲基戊二烯; Ln代表Er III,Dy III,Ho III; COT代表环辛酸酯),并提出了Au(111)衬底。我们计算了Er单离子磁体器件的并联和反并联配置的电流曲线,发现隧道磁阻(TMR)随偏置-34〜24%的变化,这表明它在半导体中的应用前景广阔。磁存储。在比较通过(Cp *)Ln(COT)单离子磁体的器件的电流后,我们发现Er单离子磁体的整流特性要比Dy和Ho单离子磁体的整流特性好,但是Ho单离子磁体的整流特性却好于Dy和Ho单离子磁体。明显的负差分电导。通过分析它们的透射光谱,可以很好地解释这些特性。还研究了Er单离子磁体衍生物的自旋极化输运;

更新日期:2020-07-28
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