Increased parasitic components in silicon-based nanometer (nm) scale active devices have various performance trade-offs between optimizing the key parameters, for example, maximum frequency of oscillation (\(f_{max}\), gate resistance and capacitance, etc. A common-source cascode device is commonly used in amplifier designs at RF/millimeter-wave (mmWave) frequencies. In addition to intrinsic parasitic components, extrinsic components due to wiring and layout effects, are also critical for performance and accurate modelling of the devices. In this work, a comparison of two different layout techniques for cascode devices is presented to optimize the extrinsic parasitic elements, such as gate resistance. A multi-gate or multi-port layout technique is proposed for optimizing the gate resistance (\(r_g\)). Extracted values from measurement results show reduction of 10% in \(r_{g}\) of multi-gate layout technique compared to a conventional gate-above-device layout for cascode devices. However, conventional layout exhibits smaller gate-to-source and gate-to-drain capacitances which leads to better performance in terms of speed, i.e. \(f_{max}\). An LNA is designed at 40 GHz frequency using proposed multi-gate cascode device. LNA achieves a measured peak gain of 10.2 dB and noise figure of 4.2 dB at 40 GHz. All the structures are designed and fabricated using 45 nm CMOS silicon on insulator (SOI) technology.

硅基纳米（nm）尺寸有源器件中增加的寄生元件在优化关键参数（例如，最大振荡频率（\（f_ {max} \），栅极电阻和电容等）之间进行折衷选择。共源共源共栅器件通常用于射频/毫米波（mmWave）频率的放大器设计中，除了固有的寄生分量外，由于布线和布局效应而产生的外在分量对于器件的性能和精确建模也至关重要。在这项工作中，比较了共源共栅器件的两种不同布局技术以优化外部寄生元件（例如栅极电阻）。提出了一种多栅极或多端口布局技术来优化栅极电阻（\（r_g \））。从测量结果中提取的值表明，与传统的共源共栅器件的栅极上方器件布局相比，多栅极布局技术的\（r_ {g} \）降低了10％。然而，常规布局表现出较小的栅源电容和栅漏电容，这导致在速度方面具有更好的性能，即\（f_ {max} \）。使用拟议的多栅极共源共栅器件将LNA设计为40 GHz频率。LNA在40 GHz时测得的峰值增益为10.2 dB，噪声系数为4.2 dB。所有结构均使用45 nm CMOS绝缘体上硅（SOI）技术进行设计和制造。