Vapor phase growth of c -plane κ -Ga 2 O 3 films has been reported on various substrates such as sapphire, GaN, and AlN. However, these films are not single crystalline, but rather a mixture of nanometer-sized in-plane 120° rotational domains. We demonstrate a technique that solves the in-plane rotational domain problem. κ -Ga 2 O 3 was grown by epitaxial lateral overgrowth. A SiO x mask with a striped or dotted-striped pattern was aligned on a c -plane sapphire substrate with a TiO x buffer layer so that the stripe was parallel to the [ ##IMG## [http://ej.iop.org/images/1347-4065/59/11/115501/jjapabbc57ieqn1.gif] {${\rm{11}}\overline{2}0$} ] direction of the sapphire. κ -Ga 2 O 3 was then grown on the substrate by halide vapor phase epitaxy. Electron backscatter diffraction, X-ray diffraction, transmission electron microscopy, and sele...

中文翻译：

---

外延横向过度生长通过几何自然选择机制对（001）κ-Ga 2 O 3的面内取向控制

已经报道了在诸如蓝宝石，GaN和AlN的各种衬底上c面κ-Ga2 O 3膜的气相生长。但是，这些膜不是单晶的，而是纳米尺寸的面内120°旋转畴的混合物。我们演示了一种解决平面内旋转域问题的技术。κ-Ga 2 O 3通过外延横向生长而生长。将具有条纹或点状图案的SiOx掩模在带有TiOx缓冲层的ac平面蓝宝石衬底上对齐，以使该条纹平行于[## IMG ## [http://ej.iop.org /images/1347-4065/59/11/115501/jjapabbc57ieqn1.gif] {$ {\ rm {11}} \ overline {2} 0 $}]的蓝宝石方向。然后通过卤化物气相外延在衬底上生长κ-Ga 2 O 3。电子背散射衍射，X射线衍射，透射电子显微镜和选择...