The properties of low concentrations of Be as a p-dopant in InAsSb with a composition corresponding to absorption in the long wavelength infrared band were studied. Temperature- and magnetic field-dependent Hall effect data were analyzed with a multi-carrier model allowing extraction of the bulk hole concentration and mobility. The hole density exhibits a weak freeze-out with an activation energy of 3.2 meV. Density functional theory calculations indicate that Be favor the In sites as Be In with an acceptor binding energy near the valence band maximum. The hole mobility increases monotonically as the temperature is lowered, showing an alloy scattering-limited value of about 1000 cm 2 V −1 s −1 at 77 K and plateauing at around 3200 cm 2 V −1 s −1 at 20 K. Temperature-dependent photoluminescence was measured up to 200 K and did not indicate any deleterious effects induced by the acceptors. A superlinear bandgap ...

中文翻译：

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长波长InAsSb铍P掺杂

研究了InAsSb中低浓度Be作为p掺杂剂的性质，其组成与长波长红外波段的吸收相对应。利用多载体模型分析了温度和磁场相关的霍尔效应数据，该模型可以提取大体积孔的浓度和迁移率。空穴密度表现出微弱的冻结，其活化能为3.2 meV。密度泛函理论计算表明，与价比最大的In附近的受体结合能一样，Be有利于In位点。空穴迁移率随温度降低而单调增加，显示出合金散射极限值在77 K时约为1000 cm 2 V -1 s -1，在20 K时约为3200 cm 2 V -1 s -1。在高达200 K的温度下测量了与温度有关的光致发光，没有表明受体诱导的任何有害作用。超线性带隙...