The chemical mechanical polishing (CMP) of ruthenium barrier layer of copper interconnection for 14 nm and below technology node has been connected with more challenges, among which the corrosion of copper and ruthenium and the selectivity of removal rate between ruthenium and copper has attracted more attention. This paper mainly focus on the influence of 5-methyl-1H-benzotriazole(MBTA) and sodium dodecyl benzene sulfonate (SDBS) on the polishing properties of copper and ruthenium during ruthenium barrier CMP in the KIO₄-based solutions. The results show that the removal rate and corrosion current density of ruthenium decrease with the increase of MBTA concentration. Subsequently, it is demonstrated that the formation of passivating film on ruthenium surface is due to the physisorption of MBTA, which occupies the reaction sites between ruthenium and KIO₄ and inhibits the corrosion of ruthenium. SDBS was introduced to KIO₄-based solution to compensate for the deficiency of MBTA in inhibiting copper corrosion. It has been proved that the coordinated use of MBTA and SDBS can reduce the copper removal rate to about 326 min⁻¹ and obtain acceptable surface morphology. The synergistic inhibition mechanism of MBTA and SDBS on copper corrosion can be elucidated as: under the action of KIO₄ and mixed inhibitors, a dense and integrated passivating film is generated on the copper surface to inhibit the excessive corrosion of copper. The passivating film is comprised of Cu–MBTA complex, adsorbed SDBS, copper oxides, Cu(IO₄)₂ and Cu(IO₃)₂. The results of CMP and ZRA experiments represent that the combination of MBTA and SDBS can adjust the removal rate selectivity of copper, ruthenium and low-κ dielectrics to 1.56:1:1.01 and evidently alleviate the galvanic corrosion of copper.

14nm及以下技术节点的铜互连钌阻挡层化学机械抛光（CMP）接连面临更多挑战，其中铜与钌的腐蚀以及钌与铜之间去除速率的选择性更受关注. 本文主要研究了KIO ₄中钌阻挡层CMP过程中5-甲基-1H-苯并三唑(MBTA)和十二烷基苯磺酸钠(SDBS)对铜和钌抛光性能的影响。基于的解决方案。结果表明，钌的去除速率和腐蚀电流密度随着MBTA浓度的增加而降低。随后证明，钌表面钝化膜的形成是由于MBTA的物理吸附作用，占据了钌与KIO ₄之间的反应位点，抑制了钌的腐蚀。SDBS 被引入到基于KIO ₄的解决方案中，以弥补 MBTA 在抑制铜腐蚀方面的不足。已经证明MBTA和SDBS的协同使用可以将铜去除率降低到约326 min ^-1并获得可接受的表面形态。MBTA和SDBS对铜腐蚀的协同抑制机理可以阐明为：在KIO ₄和混合缓蚀剂的作用下，在铜表面生成致密完整的钝化膜，抑制铜的过度腐蚀。钝化膜由Cu-MBTA复合物、吸附的SDBS、氧化铜、Cu(IO ₄ ) ₂和Cu(IO ₃ ) _{2 组成}。CMP和ZRA实验结果表明MBTA和SDBS的组合可以将铜、钌和低κ电介质的去除率选择性调整为1.56:1:1.01，明显减轻铜的电偶腐蚀。