Improved electrical and deep-UV sensing characteristics of Al 2 O 3 -dielectric Al 0.75 Ga 0.25 N/n-Al x Ga 1−x N/Al 0.75 Ga 0.25 N/AlN metal-oxide-semiconductor hetero-structure field-effect transistors (MOS-HFETs), grown on a SiC substrate, with an AlGaN ultra-widegap channel design are investigated. 30 nm thick high-k Al 2 O 3 was deposited as both the gate oxide and surface passivation layer by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. Improved device characteristics, including maximum drain-source current density ( I DS, max ) of 130.1 mA mm −1 , maximum extrinsic transconductance ( g m, max ) of 11.8 mS mm −1 , on/off-current ratio ( I on / I off ) of 1.4 × 10 7 , gate-voltage swing (GVS) linearity of 5.8 V, two-terminal off-state ga...

中文翻译：

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Al 2 O 3-电介质AlGaN / AlN / SiC MOS-HFET的改进的电学和深紫外传感特性

Al 2 O 3-电介质Al 0.75 Ga 0.25 N / n-Al x Ga 1-x N / Al 0.75 Ga 0.25 N / AlN金属氧化物半导体异质结构场效应晶体管的改进的电学和深紫外感测特性研究了在SiC衬底上生长的具有AlGaN超宽间隙沟道设计的（MOS-HFET）。通过使用非真空超声喷雾热解沉积（USPD）方法沉积30 nm厚的高k Al 2 O 3作为栅氧化物和表面钝化层。改善的器件特性，包括最大漏源电流密度（I DS，max）为130.1 mA mm -1，最大非本征跨导（gm，max）为11.8 mS mm -1，开/关电流比（I on / I off）为1.4×10 7，栅极电压摆幅（GVS）线性为5.8 V，两端关断状态ga ...