Supercritical CO₂ fluid is reported as an effective media in optimizing the SiO₂/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 C. After SCCO₂ treatment, the breakdown electric field is improved to 10.7 MVcm⁻¹. The near-interfacial oxide traps is decreased from 1.62נ10¹¹ to 1.84נ10¹⁰ cm⁻². The interface state density at 0.2eV below E _C is reduced from 6נ10¹² to 2.5נ10¹²eV⁻¹ cm⁻². A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance.

中文翻译：

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4H-SiC (0001) MOS结构与超临界CO ₂流体的界面优化

据报道，超临界 CO ₂流体是优化4H-SiC(0001) MOS 结构中SiO ₂ /SiC 界面的有效介质，温度低至 150 C。SCCO ₂处理后，击穿电场提高到 10.7 MVcm ^-1。近界面氧化物陷阱从 1.62נ10 ¹¹减少到 1.84נ10 ¹⁰ cm ^-2。低于E _C 0.2eV 的界面态密度从 6נ10 ¹²减少到 2.5נ10 ¹² eV ^-1 cm ^-2. 提出了一个动态反应模型来解释缺陷钝化反应。该技术可以有效地应用于接口半导体器件以提高性能。