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Selective Etching of (111)B‐Oriented AlxGa1−xAs‐Layers for Epitaxial Lift‐Off
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-14 , DOI: 10.1002/pssa.202000408
Tobias Henksmeier 1 , Martin Eppinger 1 , Bernhard Reineke 1 , Thomas Zentgraf 1 , Cedrik Meier 1 , Dirk Reuter 1
Affiliation  

GaAs‐(111)‐nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift‐off using selective etching of Al‐containing layers and subsequent transfer to glass substrates. Herein, the selective etching of (111)B‐oriented AlxGa1−xAs sacrificial layers (10–50 nm thick) with different aluminum concentrations (x = 0.5–1.0) in 10% hydrofluoric acid is investigated and compared with standard (100)‐oriented structures. The thinner the sacrificial layer and the lower the aluminum content, the lower the lateral etch rate. For both orientations, the lateral etch rates are in the same order of magnitude, but some quantitative differences exist. Furthermore, the epitaxial lift‐off, the transfer, and the nanopatterning of thin (111)B‐oriented GaAs membranes are demonstrated. Atomic force microscopy and high‐resolution X‐ray diffraction measurements reveal the high structural quality of the transferred GaAs‐(111) films.

中文翻译:

(111)B取向的AlxGa1-xAs层的选择性蚀刻,用于外延剥离

产生二次谐波的GaAs-(111)-纳米结构是非线性光学的新组成部分。这种结构可以通过外延剥离,使用含铝层的选择性刻蚀并随后转移到玻璃基板上来制造。在此,对具有不同铝浓度(x)的(111)B取向Al x Ga 1- x As牺牲层(厚度为10-50 nm)进行选择性蚀刻 研究了在10%氢氟酸中= 0.5–1.0)的情况,并将其与标准(100)定向结构进行了比较。牺牲层越薄且铝含量越低,横向蚀刻速率越低。对于两个方向,横向蚀刻速率处于相同的数量级,但是存在一些数量上的差异。此外,还证明了(111)B取向GaAs薄膜的外延剥离,转移和纳米构图。原子力显微镜和高分辨率X射线衍射测量揭示了转移的GaAs-(111)膜的高结构质量。
更新日期:2020-10-14
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