This work presents the deposition of Nb2O5 on p and n type silicon substrate. Nb2O5 thin film was deposited using precipitation method for solution preparation, and employing spin coating technique for film deposition, where optimum preparation condition were achieved in our previous published article. The electrical characteristic shows a good rectification ratio of about 46.7 for the Nb2O5/p-Si junction and 4.9 for Nb2O5/n-Si. The estimated ideality factors of n- and p-type Si found to be 5.17 and 3.84 respectively. The maximum detectivity was obtained using P-Si substrate and found to be about 6.2 × 1012 cm Hz1/2 W−1.

中文翻译：

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硅衬底类型对 Nb2O5/Si 器件性能的影响：答案取决于物理分析

这项工作介绍了 Nb2O5 在 p 和 n 型硅衬底上的沉积。Nb2O5 薄膜采用沉淀法制备溶液，采用旋涂技术进行薄膜沉积，在我们之前发表的文章中达到了最佳制备条件。电气特性表明，Nb2O5/p-Si 结的整流比约为 46.7，Nb2O5/n-Si 的整流比约为 4.9。n 型和 p 型 Si 的估计理想因子分别为 5.17 和 3.84。使用 P-Si 衬底获得最大探测率，发现约为 6.2 × 1012 cm Hz1/2 W-1。