In this work, Pt-doped In₂O₃ nanoparticles (Pt-In₂O₃) were inkjet printed on a FET-type sensor platform that has a floating gate horizontally aligned with a control gate for humidity detection at room temperature. The relative humidity (RH)-sensing behavior of the FET-type sensor was investigated in a range from 3.3 (dry air in the work) to about 18%. A pulsed measurement method was applied to the transient RH-sensing tests of the FET-type sensor to suppress sensor baseline drift. An inkjet-printed Pt-In₂O₃ resistive-type sensor was also fabricated on the same wafer for comparison, and it showed no response to low RH levels (below 18%). In contrast, the FET-type sensor presented excellent low humidity sensitivity and fast response (32% of response and 58 s of response time for 18% RH) as it is able to detect the work-function changes of the sensing material induced by the physisorption of water molecules. The sensing mechanism of the FET-type sensor and the principle behind the difference in sensing performance between two types of sensors were explained through the analysis on the adsorption processes of water molecules and energy band diagrams. This research is very useful for the in-depth study of the humidity-sensing behaviors of Pt-In₂O₃, and the proposed FET-type humidity sensor could be a potential candidate in the field of real-time gas detection.

在这项工作中，将Pt掺杂的In ₂ O ₃纳米颗粒（Pt-In ₂ O ₃）喷墨印刷在FET型传感器平台上，该平台具有一个与控制栅水平对准的浮栅，用于室温下的湿度检测。FET型传感器的相对湿度（RH）感应行为已在3.3（工作中的干燥空气）到18％的范围内进行了研究。脉冲测量方法应用于FET型传感器的瞬态RH感测，以抑制传感器基线漂移。喷墨印刷的Pt-In ₂ O ₃电阻型传感器也制造在同一晶片上用于比较，它对低RH水平（低于18％）无响应。相比之下，FET型传感器具有出色的低湿度敏感性和快速响应性（对于18％RH，响应速度为32％，响应时间为58秒），因为它能够检测由感应引起的传感材料的功函数变化。水分子的物理吸附。通过对水分子的吸附过程和能带图的分析，解释了FET型传感器的传感机理以及两种传感器之间的传感性能差异背后的原理。该研究对于深入研究Pt-In ₂ O ₃的湿度传感行为非常有用。，并且所提出的FET型湿度传感器可能是实时气体检测领域的潜在候选者。