An anomaly was observed in the heterodyne photocarrier radiometry (HePCR) frequency response of Si wafers in the form of a signal amplitude depression (‘dip’) accompanied by a 180° phase transition. This phenomenon resembles an electronic notch filter and was investigated experimentally and theoretically by invoking free-carrier-density-wave (CDW) kinetics in generic semiconductor systems. Both homodyne PCR and HePCR signals were obtained from n- and p -type wafers of different resistivities. Dynamic nonlinear rate-equation models with two bandgap carrier traps were introduced and analytical zeroth and first-order CDW solutions were obtained in the frequency domain. The experimental frequency responses of the HePCR optoelectronic notch phenomenon were found to be in very good agreement with the theory. Characteristic CDW recombination and trap capture and emission characteristic times were obtained and studied as functions of the illuminating laser intensity. The pr...

中文翻译：

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Si晶片的外差光载流子辐射频率响应中的光电陷波（'dip'）现象：半导体中定量陷阱态动态过程的途径

在硅晶片的外差光载波辐射测量（HePCR）频率响应中观察到一个异常，该异常以信号振幅降低（'dip'）的形式伴有180°相变。这种现象类似于电子陷波滤波器，并通过调用常规半导体系统中的自由载流子密度波（CDW）动力学进行了实验和理论研究。从电阻率不同的n型和p型晶片获得零差PCR和HePCR信号。介绍了具有两个带隙载流子陷阱的动态非线性速率方程模型，并在频域中获得了解析零阶和一阶CDW解。发现HePCR光电陷波现象的实验频率响应与理论非常吻合。获得了特征性CDW重组以及陷阱捕获和发射的特征时间，并将其作为照明激光强度的函数进行研究。产品