The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate’s edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates’ lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained.

中文翻译：

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带场板的Si衬底AlGaN/GaN HEMT击穿特性的分析研究

在这项工作中提出了具有栅极和漏极场板的 Si 衬底 AlGaN/GaN HEMT 的击穿电压模型。硅衬底和 GaN 缓冲器被视为建模过程中的耗尽区。分析模型显示出极大的简单性和准确性。它提供了对 AlGaN/GaN HEMT 击穿特性的物理见解。雪崩击穿发生在横向结构的场板边缘或垂直结构的界面处。根据分析模型，本文论证了横向击穿和垂直击穿之间的关系。击穿位置受结构参数变化的影响，包括栅漏距离、缓冲器厚度和场板长度。借助分析模型，