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Light-induced irreversible structural phase transition in trilayer graphene
Light: Science & Applications ( IF 20.6 ) Pub Date : 2020-10-13 , DOI: 10.1038/s41377-020-00412-6
Jianyu Zhang , Jinsen Han , Gang Peng , Xi Yang , Xiaoming Yuan , Yongjun Li , Jianing Chen , Wei Xu , Ken Liu , Zhihong Zhu , Weiqi Cao , Zheng Han , Jiayu Dai , Mengjian Zhu , Shiqiao Qin , Kostya S. Novoselov

A crystal structure has a profound influence on the physical properties of the corresponding material. By synthesizing crystals with particular symmetries, one can strongly tune their properties, even for the same chemical configuration (compare graphite and diamond, for instance). Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations. Such abilities, though rare, lead to a number of exciting phenomena, such as phase-change memory effects. In the case of trilayer graphene, there are two common stacking configurations (ABA and ABC) that have distinct electronic band structures and exhibit very different behaviors. Domain walls exist in the trilayer graphene with both stacking orders, showing fascinating new physics such as the quantum valley Hall effect. Extensive efforts have been dedicated to the phase engineering of trilayer graphene. However, the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge. Here, we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation, creating domains of different shapes in trilayer graphene. The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene, offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.



中文翻译:

三层石墨烯中的光诱导不可逆结构相变

晶体结构对相应材料的物理性能有深远的影响。通过合成具有特定对称性的晶体,即使对于相同的化学构型(例如,比较石墨和金刚石),也可以强烈地调节其性能。当可以通过外部刺激动态改变晶体的结构相时,就会出现更多有趣的机会。这种能力虽然很少见,但会导致许多令人兴奋的现象,例如相变记忆效应。在三层石墨烯的情况下,有两种常见的堆叠结构(ABA和ABC),具有不同的电子能带结构并表现出非常不同的行为。畴壁以两个堆积顺序存在于三层石墨烯中,显示出令人着迷的新物理学,例如量子谷霍尔效应。致力于三层石墨烯的相工程。然而,操纵畴壁以实现对局部结构和性质的精确控制仍然是相当大的挑战。在这里,我们通过实验证明我们可以通过激光辐照从一个结构相切换到另一个结构相,从而在三层石墨烯中创建不同形状的畴。控制畴壁的位置和方向的能力导致对石墨烯的局部结构相和特性的精细控制,从而提供了一种简单而有效的方法来创建具有设计的原子结构以及电子和光学特性的人造二维材料。为了实现对局部结构和性能的精确控制,操纵畴壁仍然是一个巨大的挑战。在这里,我们通过实验证明我们可以通过激光辐照从一个结构相切换到另一个结构相,从而在三层石墨烯中创建不同形状的畴。控制畴壁的位置和方向的能力导致对石墨烯的局部结构相和特性的精细控制,从而提供了一种简单而有效的方法来创建具有设计的原子结构以及电子和光学特性的人造二维材料。为了实现对局部结构和性能的精确控制,操纵畴壁仍然是一个巨大的挑战。在这里,我们通过实验证明我们可以通过激光辐照从一个结构相切换到另一个结构相,从而在三层石墨烯中创建不同形状的畴。控制畴壁的位置和方向的能力导致对石墨烯的局部结构相和特性的精细控制,从而提供了一种简单而有效的方法来创建具有设计的原子结构以及电子和光学特性的人造二维材料。

更新日期:2020-10-13
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