Abstract 0.28Pb(In1/2Nb1/2)O3-0.40Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 ceramics were synthesized by conventional solid-phase method using nano-sized In2O3. All the sintered 0.28PIN-0.40PMN-0.32PT ceramics have pure perovskite structure with composition locating at rhombohedral side around the morphotropic phase boundary (MPB) region. The 0.28PIN-0.40PMN-0.32PT ceramics belong to displacive driving ferroelectrics with apparent diffused phase transition characteristic. Although the rhombohedral-tetragonal ferroelectric phase transition temperature (TR-T) increases only to ∼120 °C due to the solid solution of Pb(In1/2Nb1/2) (PIN), the 0.28PIN-0.40PMN-0.32PT ceramics present high piezoelectric thermal stability till around the Curie temperature (Tm), which extremely widens the working temperature range and makes the 0.28PIN-0.40PMN-0.32PT ceramics suitable for high-temperature piezoelectric applications.

中文翻译：

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纳米In2O3对0.28Pb(In1/2Nb1/2)O3-0.40Pb(Mg1/3Nb2/3)O3-0.32PbTiO3陶瓷烧结行为和电学性能的影响

摘要 采用纳米尺寸的In2O3，采用常规固相法合成了0.28Pb(In1/2Nb1/2)O3-0.40Pb(Mg1/3Nb2/3)O3-0.32PbTiO3陶瓷。所有烧结的 0.28PIN-0.40PMN-0.32PT 陶瓷均具有纯钙钛矿结构，成分位于同向相界 (MPB) 区域周围的菱形侧。0.28PIN-0.40PMN-0.32PT陶瓷属于位移驱动铁电体，具有明显的扩散相变特性。尽管由于 Pb(In1/2Nb1/2) (PIN) 的固溶，菱形-四方铁电相变温度 (TR-T) 仅增加到 120 °C，但存在 0.28PIN-0.40PMN-0.32PT 陶瓷直到居里温度（Tm）附近的高压电热稳定性，这极大地拓宽了工作温度范围并使0.28PIN-0.40PMN-0。