Abstract Indium Tin Oxide (ITO) thin films are doped with zirconium (Zr) by varying the direct current (DC) power sources to investigate the effects of Zr doping on surface morphology, microstructure, and mechanical, electrical, and optical properties. The ITO:Zr specimens possess more grains with the (400) orientation when the DC power is elevated. Crystallinity and surface roughness are highly dependent on grain size. The product value of crystallinity and grain size is observed to be positively correlated to the surface roughness. Reduced modulus and hardness of specimen are lowered by increasing the DC power, and these two parameters are also positively correlated to the product of crystallinity and grain size. In this study, the choice of 35 W as the power can bring in the highest transmittance (>81%) in the wavelength region of 380–2600 nm and the lowest resistivity of all specimens. Increasing the power to be higher than 35 W will produce more excessive carriers to reduce the carrier concentration and mobility, thus elevating the resistivity. A significant rise in the infrared transmittance (800–2600 nm) compared to the undoped ITO thin film is achieved by doping the Zr into ITO with a DC power of 35 W.

中文翻译：

---

添加锆对ITO薄膜的电学、光学、机械性能和微观结构的影响

摘要 通过改变直流 (DC) 电源，在氧化铟锡 (ITO) 薄膜中掺杂锆 (Zr)，以研究 Zr 掺杂对表面形貌、微观结构以及机械、电学和光学性能的影响。当直流电源升高时，ITO:Zr 试样具有更多的 (400) 取向晶粒。结晶度和表面粗糙度高度依赖于晶粒尺寸。观察到结晶度和晶粒尺寸的乘积值与表面粗糙度正相关。增加直流功率会降低试样的降低模量和硬度，这两个参数也与结晶度和晶粒尺寸的乘积呈正相关。在本研究中，选择 35 W 作为功率可以带来最高的透光率 (> 81%) 在 380-2600 nm 的波长范围内，是所有样品中电阻率最低的。将功率提高到 35W 以上会产生更多的过量载流子，从而降低载流子浓度和迁移率，从而提高电阻率。与未掺杂的 ITO 薄膜相比，红外透射率（800-2600 nm）的显着提高是通过在 35 W 的直流功率下将 Zr 掺杂到 ITO 中实现的。