Abstract In this paper, a two dimensional analytical model for Single Gate Extended Source Tunnel FET has been developed which is based on the solution of Poisson’s equation simplified using parabolic approximation method. Different electrical characteristics of device physics such as surface potential, drain current, lateral, and vertical electric field of SG-ESTFET are studied incorporating various parameters like mole fraction of SiGe layer, gate dielectric constants, etc. Furthermore, in modeling and simulation, the depletion region of the drain side is included considering the effect of the fringing field. The sentaurus TCAD device simulator has been used to verify the accuracy and validity of the proposed analytical model for various electrical parameters such as gate to source voltage, mole fraction, and gate dielectric constants. The validity of the proposed model is confirmed by observing a decent agreement between modeling and simulation. The proposed compact model delivers quick and accurate values of various performance parameters.

中文翻译：

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基于器件物理的单栅极扩展源隧道 FET (SG-ESTFET) 电气特性分析建模

摘要 在本文中，基于使用抛物线近似方法简化的泊松方程的解，开发了单栅极扩展源隧道FET 的二维解析模型。结合各种参数，如 SiGe 层的摩尔分数、栅极介电常数等，研究了器件物理的不同电气特性，如表面电位、漏极电流、横向和垂直电场。 此外，在建模和仿真中，考虑到边缘场的影响，包括漏极侧的耗尽区。sentaurus TCAD 设备模拟器已被用于验证针对各种电气参数（例如栅源电压、摩尔分数和栅介电常数）提出的分析模型的准确性和有效性。通过观察建模和模拟之间的良好一致性，证实了所提出模型的有效性。所提出的紧凑模型可提供各种性能参数的快速准确值。