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Fabrication of highly (111)-oriented Cu2O films on glass substrates by repeated chemical bath deposition
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.jcrysgro.2020.125920
Daichi Tonagi , Manabu Hagiwara , Shinobu Fujihara

Abstract In this study, we fabricated Cu2O films on bare glass substrates by a chemical bath deposition (CBD) technique, which consists of a seeding process and a subsequent film-growth process. Dense (111)-oriented Cu2O films were formed in an aqueous solution of copper (II) sulfate containing L-ascorbate and citrate ions at a low temperature of 80 °C. The film thickness and (111)-orientation degree (Lotgering factor) were both monotonically increased by simply repeating the film-growth process. As a result, a Cu2O film with a high (111)-orientation degree of 0.83 and a large thickness 1440 nm was obtained. Detailed chemical and structural characterizations suggested that as-deposited Cu2O films contained citrate ions and metallic Cu as impurities. We also found that a heat treatment at 500 °C under nitrogen flow was effective to remove these impurities.

中文翻译:

通过重复化学浴沉积在玻璃基板上制备高度 (111) 取向的 Cu2O 薄膜

摘要 在这项研究中,我们通过化学浴沉积 (CBD) 技术在裸露玻璃基板上制备了 Cu2O 薄膜,该技术包括种子过程和随后的薄膜生长过程。在 80 °C 的低温下,在含有 L-抗坏血酸和柠檬酸根离子的硫酸铜 (II) 水溶液中形成致密的 (111) 取向的 Cu2O 薄膜。通过简单地重复薄膜生长过程,薄膜厚度和(111)取向度(Lotgering 因子)均单调增加。结果,获得了具有0.83的高(111)取向度和1440nm的大厚度的Cu2O膜。详细的化学和结构表征表明,沉积的 Cu2O 薄膜含有柠檬酸根离子和金属 Cu 作为杂质。
更新日期:2020-12-01
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