Abstract

Herein, we are reporting a facile chemical process to attain high-grade PbS spherical nanoparticles with diverse La doping contents at low temperature and named it as La@PbS SNPs. All the prepared La@PbS SNPs samples are of single-cubic phase with good crystalline nature confirmed from XRD and Rietveld refinement. Along with lattice constants several other structure-related parameters like size, dislocations, strain, stacking fault, density and specific surface area were calculated. EDX and SEM-e-mapping analyses confirm the presence of La in PbS with homogeneous distribution throughout the samples. For morphological investigation FESEM was employed, which approved the synthesis of SNPs of low dimensions at all La contents. FT-Raman analysis shows characteristics vibrational modes related to cubic-PbS and that is in good accordance with XRD outcomes. Energy gap values were determined through Kubelka–Munk procedure and noticed to lie between 1.01 to 1.103 eV (\( \Delta E = 0.093 \;{\text{eV}}) \), this shows a very minute shift in energy gap with La doping in PbS. Dielectric constant (\( \varepsilon ' \)), loss tangent, dielectric loss and impedance values were assessed and stable values of \( \varepsilon ' \) were noticed in 20–50 range and 5.0 wt % La@PbS SNPs possesses highest value. The ac electrical conductivity analysis revealed enhancement with La content in PbS. The correlated barrier hoping mechanism was involved in the prepared La@PbS SNPs. Furthermore, the DC electrical properties were studied and discussed the impact of La content.

Graphic abstract

中文翻译：

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La掺杂量对通过低温化学法快速合成的PbS球形纳米颗粒关键物理性能的影响

摘要

在其中，我们报道了一种简便的化学过程，可在低温下获得具有不同La掺杂含量的高品位PbS球形纳米颗粒，并将其命名为La @ PbS SNPs。所有制备的La @ PbS SNPs样品均为单立方晶相，具有良好的结晶性质，这是通过XRD和Rietveld精炼证实的。除晶格常数外，还计算了其他一些与结构有关的参数，例如尺寸，位错，应变，堆垛层错，密度和比表面积。EDX和SEM-e映射分析证实了La在PbS中的存在，并且在整个样品中分布均匀。为了进行形态学研究，采用了FESEM，该方法批准了在所有La含量下都可以合成低尺寸的SNP。FT-拉曼分析显示了与立方PbS有关的特征振动模式，并且与XRD结果非常吻合。能隙值是通过Kubelka-Munk程序确定的，发现介于1.01至1.103 eV（\（\ Delta E = 0.093 \; {\ text {eV}}）\），这表明在La掺杂PbS时，能隙的变化很小。介电常数（\（\ varepsilon'\）），损耗角正切，介电损耗和阻抗值得到评估，并且\（\ varepsilon'\）的稳定值在20至50范围内，且5.0 wt％La @ PbS SNP具有最高值。交流电导率分析显示PbS中的La含量增加。制备的La @ PbS SNPs参与了相关的障碍跳跃机制。此外，研究了直流电性能并讨论了La含量的影响。

图形摘要