The aim of the present study is to investigate chemical vapor deposition of Ge nanowires from readily available precursors solid GeO2 and liquid ethanol (C2H5OH) at atmospheric pressure. Gaseous GeO was generated in situ by the reactions between the reactants in the source temperature range from 1000 K to 1200 K. Ge wires were grown from the gaseous species transported from the source to the Au-coated Si substrate heated to 723 K for 5 min and 15 min. The diameter of the Ge wires slightly increased with increasing source temperature for the growth time of 5 min. The mean diameter (~ 220 nm) of the wires grown from the species generated at 1200 K for 15 min was greater than those of the other samples (range ~ 120 nm to 145 nm) owing to excessive Ge deposition on previously formed Ge wires. The growth of the Ge nanowires is discussed in terms of the vapor–liquid–solid mechanism and the reduction reactions between the species derived from the precursors.

中文翻译：

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使用现成的前体 GeO2 和 C2H5OH 在大气压下通过化学气相沉积生长 Ge 纳米线

本研究的目的是研究在常压下从容易获得的前体固体 GeO2 和液体乙醇 (C2H5OH) 中化学气相沉积 Ge 纳米线。在 1000 K 到 1200 K 的源温度范围内，通过反应物之间的反应原位生成气态 GeO。Ge 线是从从源传输到镀金的 Si 衬底的气态物质中生长的，加热到 723 K 并保持 5 分钟和 15 分钟。Ge 线的直径随着源温度的增加而略有增加，生长时间为 5 分钟。由于在先前形成的 Ge 线上过多的 Ge 沉积，从在 1200 K 下生成的物种生长 15 分钟的线的平均直径（~ 220 nm）大于其他样品（范围~ 120 nm 至 145 nm）。