The Tunneling Carbon Nanotube FET (T-CNTFET) is one of the most promising alternatives to the conventional MOSFET. However, T-CNTFET suffers mainly from low ON-current. In this paper, we propose a modified hetero-dielectric T-CNTFET in which a dielectric pocket is inserted near the source-channel interface. The impact of the length of the dielectric pocket and its shift from source/channel barrier on DC and high-frequency performance is investigated. The performance parameters are studied by examining ON-current (I _ON) and cutoff frequency (f _T ) as measures for the DC and high frequency behavior, respectively. It is demonstrated that the condition of an optimum design for the pocket position concerning I _ON is different from that regarding f _T and a compromise should be met in order to obtain the best performance. Based on our developed 2D quantum simulations, it is shown that a high-k pocket having a length of 12.5% of the channel length may result in an increase of 65% in I _ON with no deterioration in f _T . Moreover, a little shift of 20% of the pocket length towards the source region doesn’t degrade I _ON and enhances f _T .

隧道碳纳米管 FET (T-CNTFET) 是传统 MOSFET 最有前途的替代品之一。然而，T-CNTFET 主要受低导通电流的影响。在本文中，我们提出了一种改进的异质电介质 T-CNTFET，其中在源极-沟道界面附近插入了一个电介质袋。研究了电介质袋的长度及其从源/通道势垒的转变对 DC 和高频性能的影响。通过检查导通电流 ( I _ON ) 和截止频率 ( f _T ) 分别作为直流和高频行为的量度来研究性能参数。证明了关于I _ON的口袋位置的优化设计条件 与关于f _{T 的}不同，应该满足折衷以获得最佳性能。根据我们开发的 2D 量子模拟，显示具有 12.5% 沟道长度的高k口袋可能导致I _ON增加 65%，而f _T没有恶化。此外，袋子长度的 20% 向源极区域的微小偏移不会降低I _ON并提高f _T。