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Boosted Dark Matter Interpretation of the XENON1T Excess
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-10-12 , DOI: 10.1103/physrevlett.125.161804
Bartosz Fornal , Pearl Sandick , Jing Shu , Meng Su , Yue Zhao

We propose boosted dark matter (BDM) as a possible explanation for the excess of keV electron recoil events observed by XENON1T. BDM particles have velocities much larger than those typical of virialized dark matter, and, as such, BDM-electron scattering can naturally produce keV electron recoils. We show that the required BDM-electron scattering cross sections can be easily realized in a simple model with a heavy vector mediator. Though these cross sections are too large for BDM to escape from the Sun, the BDM flux can originate from the Galactic Center or from halo dark matter annihilations. Furthermore, a daily modulation of the BDM signal will be present, which could not only be used to differentiate it from various backgrounds but would also provide important directional information for the BDM flux.

中文翻译:

XENON1T多余物的增强暗物质解释

我们提出增强暗物质(BDM)作为XENON1T观测到的过量的keV电子反冲事件的可能解释。BDM粒子的速度比病毒化暗物质的典型速度大得多,因此,BDM电子散射自然会产生keV电子反冲力。我们展示了所需的BDM-电子散射截面可以在带有重矢量介体的简单模型中轻松实现。尽管这些横截面太大,以至于BDM无法从太阳中逸出,但BDM通量可能来自银河系中心或晕圈暗物质an灭。此外,将存在BDM信号的日常调制,这不仅可以用来将其与各种背景区分开,而且还可以为BDM通量提供重要的方向信息。
更新日期:2020-10-12
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