Atomic layer deposition (ALD) is widely used in the semiconductor and materials industries for depositing thin films. Here, we describe a holder/container for performing ALD on particles that does not require agitation. This device contains a broad, shallow, circular recess that holds the particles. Two different frits and combinations of stacked meshes were explored as a cover to this holder to restrict the movement of the particles while still allowing good conductance of the ALD reagent gases. A mathematical discussion of the diffusion through the frits and stacked meshes is presented. As confirmed by spectroscopic ellipsometry (SE) on planar witness silicon shards, consistent, high‐quality film growth took place inside and outside the holder. The performance of the holder was demonstrated with ~5‐μm zirconia particles that were coated with alumina from trimethylaluminum (TMA) and water, and with zinc oxide from diethylzinc (DEZ) and water. Deposition on different amounts of particles was investigated (50, 100, 200, and 500 mg). Parasitic chemical vapor deposition (CVD) appeared to be present when a greater number of particles or meshes were used. ALD coating on particles was also confirmed by X‐ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and energy‐dispersive X‐ray spectroscopy (EDS).

中文翻译：

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一种新型的带有多孔盖的容器/容器，用于在颗粒上进行原子层沉积，并具有迁移分析和所得材料的详细表征

原子层沉积（ALD）在半导体和材料工业中广泛用于沉积薄膜。在这里，我们描述了一种用于在不需要搅拌的情况下对颗粒进行ALD的支架/容器。该设备包含一个宽而浅的圆形凹槽，用于容纳颗粒。探索了两种不同的玻璃料和堆叠筛孔的组合作为该支架的覆盖物，以限制颗粒的移动，同时仍允许ALD反应气的良好传导。提出了通过玻璃料和堆叠网孔扩散的数学讨论。光谱椭圆偏光法（SE）在平面见证硅碎片上证实，在固定器的内部和外部均发生了稳定，高质量的薄膜生长。约5μm的氧化锆颗粒用三甲基铝（TMA）和水制得的氧化铝，以及二乙基锌（DEZ）和水制得的氧化锌包被，证明了支架的性能。研究了不同量的颗粒（50、100、200和500 mg）上的沉积。当使用大量的颗粒或网眼时，似乎存在寄生化学气相沉积（CVD）。X射线光电子能谱（XPS），透射电子显微镜（TEM）和能量色散X射线能谱（EDS）也证实了颗粒上的ALD涂层。当使用大量的颗粒或网眼时，似乎存在寄生化学气相沉积（CVD）。X射线光电子能谱（XPS），透射电子显微镜（TEM）和能量色散X射线能谱（EDS）也证实了颗粒上的ALD涂层。当使用大量的颗粒或网眼时，似乎存在寄生化学气相沉积（CVD）。X射线光电子能谱（XPS），透射电子显微镜（TEM）和能量色散X射线能谱（EDS）也证实了颗粒上的ALD涂层。