当前位置：
X-MOL 学术
›
Phys. Status Solidi A
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-12 , DOI: 10.1002/pssa.202070056 Neha Mohta 1 , Roop K. Mech 1 , Sooraj Sanjay 1 , R. Muralidharan 1 , Digbijoy N. Nath 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-10-12 , DOI: 10.1002/pssa.202070056 Neha Mohta 1 , Roop K. Mech 1 , Sooraj Sanjay 1 , R. Muralidharan 1 , Digbijoy N. Nath 1
Affiliation
|
Artificial Synapse
中文翻译：
基于带有高k Ta2O5电介质的背栅MoS2场效应晶体管的人工突触
人工突触
更新日期：2020-10-12
中文翻译：
基于带有高k Ta2O5电介质的背栅MoS2场效应晶体管的人工突触
人工突触
京公网安备 11010802027423号