In this study, an E‐band low‐noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon‐germanium 130‐nm bipolar complementary metal‐oxide‐semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance‐controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor‐capacitor (L‐C) filter without any resistor in an interstage matching circuit. Using the impedance‐controllable filter instead of the conventional L‐C filter, the unwanted high signal gains of the designed E‐band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small‐signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E‐band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of –14 dB to –5 dB, and output matching (S₂₂) of –19 dB to –4 dB at E‐band operating frequencies of 70 GHz to 95 GHz.

中文翻译：

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具有SiGe 130nm BiCMOS技术的带阻抗可控滤波器的E波段低噪声放大器MMIC

在这项研究中，使用硅锗130 nm双极互补金属氧化物半导体技术设计了E波段低噪声放大器（LNA）单片微波集成电路（MMIC），以抑制工作频率以外的有害信号增益并改善工作频率下的信号增益和噪声系数。拟议的阻抗可控滤波器具有串联（R _s）和并联（R _p）电阻，而不是传统的电感电容（LC）滤波器，级间匹配电路中没有任何电阻。使用阻抗可控滤波器代替传统的L‐C滤波器，设计的E波段LNA在54 GHz至57 GHz频率上的不必要的高信号增益从24 dB至26 dB抑制了8 dB至12 dB。 12 dB至18 dB。在70 GHz至95 GHz的工作频率下，小信号增益S ₂₁从21.6 dB至25.4 dB降至19.2 dB至24.0 dB仅降低了1.4 dB至2.4 dB。带有建议滤波器的预制E波段LNA MMIC的测量S ₂₁为16 dB至21 dB，输入匹配（S ₁₁）为–14 dB至–5 dB，输出匹配为（S ₂₂在70 GHz至95 GHz的E波段工作频率下为–19 dB至–4 dB）。