Abstract Single-walled carbon nanotubes (SWCNTs) are potential candidates for next-generation computing to meet the requirement of device scaling. Here we discuss recent breakthroughs in the CNT-based field-effect transistors (FETs) and highlight key ongoing topics in purification and assembly. A few key challenges that capitalize on the chemical vapor deposition (CVD) of SWCNTs are discussed in which surface science and model systems can enable advances in high-purity synthesis. A full description of the CVD growth and chemical sorting of SWCNTs falls beyond the scope of this opinion, but we focus on the framework of SWCNTs in FETs and draw connections to their requirements for high-quality materials that highlight the underlying mechanisms.

中文翻译：

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碳纳米管推动下一代电子产品

摘要 单壁碳纳米管 (SWCNT) 是满足器件缩放要求的下一代计算的潜在候选者。在这里，我们讨论了基于 CNT 的场效应晶体管 (FET) 的最新突破，并重点介绍了纯化和组装中正在进行的关键主题。讨论了利用 SWCNT 化学气相沉积 (CVD) 的一些关键挑战，其中表面科学和模型系统可以促进高纯度合成的进步。对 SWCNT 的 CVD 生长和化学分选的完整描述超出了本意见的范围，但我们专注于 FET 中 SWCNT 的框架，并将其与突出潜在机制的高质量材料的要求联系起来。