Abstract Two-dimensional layered materials offer an exceptional platform for production of high-performance optoelectronic devices owing to inimitable opto-electronic characteristics. Metal/TMDCs Nanocomposites can generate significant attention in photoswitching applications due to plasmonic effect. Herein, Ag-WS2 nanocomposites was synthesized by cost effective production through liquid phase exfoliation and microwave assisted solvothermal reaction for improved photodetection for visible light. The Ag-WS2 nanocomposites have highly crystalline nature and Ag nanoparticles are successfully decorated on WS2 Nanosheets through van der Waals interaction. By knowing the excellent absorption of light by Ag-WS2 nanocomposites, large are photodiode based on Ag-WS2/Si heterostructure was fabricated and exploited rigorously under visible light. The photodiode is found to be exhibiting incredible photoswitching ability including high photoresponsivity of 2.09 A/W, specific detectivity of 6.6 × 1011 Jones, external quantum efficiency of 487%. Although, the performance of photodiode is limited by charge trapping centres, device exhibits self-powered photodetection ability. Additionally, the present results of Ag-WS2/Si photodiode are nicely enhanced compared to previous reports. Finally, the fabricated photodiode advocates huge development in the field of large-area optoelectronics due to optimized material configuration and device structure.

中文翻译：

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Ag-WS2/Si异质结中等离子体增强的光响应

摘要 由于独特的光电特性，二维层状材料为高性能光电器件的生产提供了一个特殊的平台。由于等离子体效应，金属/TMDCs 纳米复合材料在光开关应用中引起了极大的关注。在本文中，Ag-WS2 纳米复合材料是通过液相剥离和微波辅助溶剂热反应以具有成本效益的生产方式合成的，以改进对可见光的光电检测。Ag-WS2 纳米复合材料具有高度结晶性，Ag 纳米粒子通过范德华相互作用成功地装饰在 WS2 纳米片上。通过了解 Ag-WS2 纳米复合材料对光的出色吸收，基于 Ag-WS2/Si 异质结构的大尺寸光电二极管在可见光下被制造和开发。发现光电二极管表现出令人难以置信的光开关能力，包括 2.09 A/W 的高光响应度、6.6 × 1011 Jones 的比探测率、487% 的外部量子效率。尽管光电二极管的性能受到电荷俘获中心的限制，但器件表现出自供电的光电检测能力。此外，与以前的报告相比，Ag-WS2/Si 光电二极管的当前结果得到了很好的增强。最后，由于材料配置和器件结构的优化，制造的光电二极管在大面积光电领域有巨大的发展。光电二极管的性能受到电荷俘获中心的限制，器件表现出自供电光电检测能力。此外，与以前的报告相比，Ag-WS2/Si 光电二极管的当前结果得到了很好的增强。最后，由于材料配置和器件结构的优化，制造的光电二极管在大面积光电领域有巨大的发展。光电二极管的性能受到电荷俘获中心的限制，器件表现出自供电光电检测能力。此外，与以前的报告相比，Ag-WS2/Si 光电二极管的当前结果得到了很好的增强。最后，由于材料配置和器件结构的优化，制造的光电二极管在大面积光电领域有巨大的发展。