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Wurtzite AlP y N 1− y : a new III-V compound semiconductor lattice-matched to GaN (0001)
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-10-08 , DOI: 10.35848/1882-0786/abbbca
Markus Pristovsek 1 , Duc van Dinh 1 , Ting Liu 1, 2 , Nobuyuki Ikarashi 1
Affiliation  

We report on a new member of the III-nitride family, wurtzite AlP y N 1− y , tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlP y N 1− y can be grown between 1050 °C to 1250 °C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlP y N 1− y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of ##IMG## [http://ej.iop.org/images/1882-0786/13/11/111001/apexabbbcaieqn1.gif] {$150\pm 50{\rm{\Omega }}/\square $} , which makes AlP y N 1− y promising for electronic applications.

中文翻译:

纤锌矿型AlP y N 1-y:晶格匹配GaN的新型III-V化合物半导体(0001)

我们报告了III族氮化物家族的新成员,纤锌矿型AlP y N 1-y,拉伸应变或(0001)GaN上的晶格匹配(≈10.6%P)。与晶格匹配的AlInN不同,AlP y N 1-y可以在氢有机金属外延气相生长下于1050°C至1250°C之间生长。从GaN到AlP y N 1-y的过渡非常明显,没有Ga残留。由于P含量低,带隙(晶格匹配大约为5.5 eV),介电函数或极化等物理性质接近AlN。第一个未经优化的AlPN / GaN异质结构显示出较低的薄层电阻## IMG ## [http://ej.iop.org/images/1882-0786/13/11/111001/apexabbbcaieqn1.gif] {$ 150 \ pm 50 {\ rm {\ Omega}} / \ square $},这使AlP y N 1-y有望用于电子应用。
更新日期:2020-10-11
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