We report on a new member of the III-nitride family, wurtzite AlP y N 1− y , tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlP y N 1− y can be grown between 1050 °C to 1250 °C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlP y N 1− y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of ##IMG## [http://ej.iop.org/images/1882-0786/13/11/111001/apexabbbcaieqn1.gif] {$150\pm 50{\rm{\Omega }}/\square $} , which makes AlP y N 1− y promising for electronic applications.

中文翻译：

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纤锌矿型AlP y N 1-y：晶格匹配GaN的新型III-V化合物半导体（0001）

我们报告了III族氮化物家族的新成员，纤锌矿型AlP y N 1-y，拉伸应变或（0001）GaN上的晶格匹配（≈10.6％P）。与晶格匹配的AlInN不同，AlP y N 1-y可以在氢有机金属外延气相生长下于1050°C至1250°C之间生长。从GaN到AlP y N 1-y的过渡非常明显，没有Ga残留。由于P含量低，带隙（晶格匹配大约为5.5 eV），介电函数或极化等物理性质接近AlN。第一个未经优化的AlPN / GaN异质结构显示出较低的薄层电阻## IMG ## [http://ej.iop.org/images/1882-0786/13/11/111001/apexabbbcaieqn1.gif] {$ 150 \ pm 50 {\ rm {\ Omega}} / \ square $}，这使AlP y N 1-y有望用于电子应用。